Infineon BFR182WH6327XTSA1 NPN RF Transistor: Key Features and Applications

The Infineon BFR182WH6327XTSA1 is a high-performance NPN silicon RF transistor designed for a wide range of small-signal amplification applications. Packaged in the compact and industry-standard SOT-343 (SC-70), this device is engineered to deliver exceptional gain and low noise at frequencies up to 8 GHz, making it a versatile component in modern RF design.

Key Features

The standout characteristics of the BFR182WH6327XTSA1 make it a preferred choice for RF engineers. Its most notable features include:

High Transition Frequency (fT): With an fT of 8 GHz, this transistor is capable of operating effectively in very high-frequency circuits, ensuring excellent signal amplification for microwave applications.

Low Noise Figure: It boasts a low noise figure, which is critical for preserving signal integrity in the initial stages of a receiver chain, minimizing the degradation of weak signals.

High Gain: The device offers high amplification gain, providing significant signal boost without requiring multiple stages, which simplifies circuit design and reduces costs.

Miniature SOT-343 Package: The small-footprint package is ideal for high-density PCB layouts, making it suitable for space-constrained portable and handheld devices.

Primary Applications

Due to its robust RF performance, the BFR182WH6327XTSA1 is deployed in numerous advanced applications, including:

Cellular Infrastructure: It is used in power amplifier driver stages and signal amplification circuits within base stations and other telecom equipment.

Wireless Communication Systems: The transistor is found in VCOs (Voltage-Controlled Oscillators), mixers, and oscillators for systems like WiFi, IoT modules, and dedicated short-range communications (DSRC).

Satellite Receivers: Its low-noise characteristics make it well-suited for the front-end of satellite downlink receivers and other satellite communication equipment.

General-Purpose RF Amplification: It serves as a reliable building block for low-noise amplifiers (LNAs) and driver amplifiers in a broad spectrum of test equipment and industrial systems.

ICGOOODFIND: The Infineon BFR182WH6327XTSA1 stands out as a highly reliable and efficient NPN RF transistor, offering an optimal blend of high-frequency operation, low noise, and high gain in a miniature package. It is an indispensable component for designing cutting-edge RF circuits in telecommunications, wireless connectivity, and satellite communications.

Keywords: RF Transistor, Low Noise Amplifier (LNA), High Frequency, SOT-343, Wireless Communication.