Infineon PX3516ADDG-R4: High-Performance Dual N-Channel MOSFET for Advanced Power Management

The relentless pursuit of higher efficiency, greater power density, and enhanced thermal performance is a constant in modern electronics design. At the heart of this evolution in power management solutions are advanced MOSFET technologies. The Infineon PX3516ADDG-R4 stands out as a premier example, a high-performance dual N-channel MOSFET engineered to meet the rigorous demands of contemporary applications.

This device integrates two robust N-channel power MOSFETs in a single, compact PG-TDSON-8 (3.3x3.3) package. This dual-die configuration is instrumental in saving valuable PCB space, a critical factor for space-constrained designs such as server power supplies, telecom infrastructure, and high-end consumer adapters. The exceptionally low typical on-resistance (RDS(on)) of just 1.6 mΩ at 10 V is a key performance metric. This ultra-low resistance directly translates to minimized conduction losses, which is paramount for achieving high efficiency and reducing heat generation during operation.

The PX3516ADDG-R4 is built using Infineon's proprietary OptiMOS™ 6 technology. This advanced process technology represents a significant leap forward, offering an optimal balance between low RDS(on) and superior switching performance. This makes the device particularly suitable for high-frequency switching circuits found in synchronous rectification stages of switch-mode power supplies (SMPS) and DC-DC converters. By enabling higher switching frequencies, designers can utilize smaller passive components like inductors and capacitors, further increasing power density.

Thermal management is a cornerstone of reliable power design. The PG-TDSON-8 package features an exposed top side, which enhances heat dissipation by allowing efficient attachment to an external heatsink. This robust thermal capability ensures the device can handle high power levels while maintaining a stable operating temperature, thereby improving long-term system reliability.

Furthermore, the MOSFET boasts a low gate charge (Qg), which simplifies drive circuit design and reduces switching losses. This combination of low RDS(on) and low Qg ensures that the PX3516ADDG-R4 delivers top-tier efficiency across a wide range of load conditions, from light loads to full power.

ICGOOODFIND: The Infineon PX3516ADDG-R4 is a superior dual N-channel MOSFET that sets a high bar for performance in advanced power management. Its exceptional blend of ultra-low on-resistance, high-frequency switching capability, and excellent thermal properties—all housed in a space-saving package—makes it an ideal choice for designers aiming to push the limits of efficiency and power density in next-generation applications.

Keywords: Power Management, Synchronous Rectification, OptiMOS™ 6, Low RDS(on), High Efficiency