Infineon BSS82C: A High-Performance P-Channel Enhancement Mode Power MOSFET

The Infineon BSS82C is a P-Channel Enhancement Mode Power MOSFET engineered to deliver superior performance in a compact, surface-mount package. Designed with low threshold drive and high switching speed, this component is an optimal solution for a wide array of power management and switching applications, including load switching, power management in portable devices, DC-DC converters, and battery protection circuits.

A key feature of the BSS82C is its exceptionally low on-state resistance (RDS(on)), which minimizes conduction losses and improves overall system efficiency. This characteristic is critical in battery-operated devices where energy conservation is paramount. The MOSFET is housed in a SOT-23 package, offering a excellent balance of size and power handling capability, making it suitable for space-constrained PCB designs.

Furthermore, the device boasts a low gate charge, enabling fast switching transitions and reducing driver requirements. This makes it compatible with low-voltage microcontroller GPIOs, simplifying design and lowering the total component count. The BSS82C is also characterized by its high robustness and reliability, underpinned by Infineon's advanced semiconductor manufacturing processes.

ICGOOODFIND: The Infineon BSS82C stands out as a highly efficient and compact P-Channel MOSFET, ideal for modern electronic designs demanding high switching speed, low power loss, and reliable performance in a minimal footprint.

Keywords:

P-Channel MOSFET

Enhancement Mode

Low RDS(on)

SOT-23 Package

Power Switching