Infineon IKW75N65ES5XKSA1: 650V 75A TRENCHSTOP™ 5 High Speed IGBT Datasheet and Application Overview

The Infineon IKW75N65ES5XKSA1 represents a significant advancement in IGBT technology, engineered for high-efficiency and high-frequency switching applications. As part of the TRENCHSTOP™ 5 High Speed family, this 650V, 75A IGBT is designed to meet the rigorous demands of modern power electronics, offering an optimal balance between low saturation voltage and minimal switching losses.

Key Features and Electrical Characteristics

The device is built on Infineon's advanced trench gate field-stop technology. This architecture is pivotal for achieving low VCE(sat), which directly enhances conduction efficiency. Furthermore, it exhibits exceptionally low turn-off losses (Eoff), a critical parameter for high-frequency operation. The positive temperature coefficient of VCE(sat) simplifies the paralleling of multiple IGBTs, enabling their use in high-current modules without the risk of thermal runaway. The integrated ultra-soft and fast reverse recovery diode ensures robust performance in hard-switching conditions, making it highly suitable for power factor correction (PFC) and solar inverter applications.

Application Overview

The primary strength of the IKW75N65ES5XKSA1 lies in its application versatility. It is an ideal choice for:

Solar Inverters: Its high-speed switching capability maximizes the efficiency of maximum power point tracking (MPPT) algorithms.

Uninterruptible Power Supplies (UPS): The low loss characteristics contribute to higher system efficiency and reduced cooling requirements.

Welding Equipment: The robust design supports high current output and cyclic loading with high reliability.

Industrial Motor Drives: The combination of high voltage capability and speed allows for compact and efficient drive designs.

Thermal and Switching Performance

The module is offered in the industry-standard TO-247 package, which provides excellent thermal impedance. This allows for effective heat dissipation, maintaining junction temperatures within safe operating limits even under heavy load conditions. The short tail current during turn-off minimizes switching noise and reduces stress on the device, leading to improved electromagnetic compatibility (EMC) of the entire system.

Conclusion and Design Considerations

Designing with the IKW75N65ES5XKSA1 requires careful attention to gate driving conditions. A recommended gate resistor must be used to control the switching speed and avoid voltage overshoots. Proper heatsinking is mandatory to exploit the full current capability of the device. Its high-speed performance also necessitates a PCB layout optimized for low stray inductance to ensure stable and reliable operation.

ICGOODFIND Summary:

The Infineon IKW75N65ES5XKSA1 is a high-speed, high-efficiency IGBT that sets a benchmark for performance in 650V applications. Its optimal trade-off between conduction and switching losses makes it a superior choice for designers aiming to push the limits of power density and efficiency in renewable energy, industrial drives, and power supplies.

Keywords:

TRENCHSTOP™ 5, High-Speed Switching, Low Switching Losses, Power Factor Correction (PFC), Solar Inverter