Infineon BSC190N15NS3G: A High-Performance 150V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its BSC190N15NS3G, a 150V N-channel OptiMOS power MOSFET that sets a new benchmark for performance in a wide array of applications.

Engineered on Infineon’s advanced super-junction technology, the BSC190N15NS3G is designed to minimize both conduction and switching losses. This device boasts an exceptionally low maximum on-state resistance (RDS(on)) of just 19 mΩ at 10 V, significantly reducing conduction losses and improving overall system efficiency. This characteristic is paramount in high-current applications, as it directly translates to lower power dissipation and reduced thermal stress.

A key highlight of this MOSFET is its outstanding switching performance. The device features low gate charge (Qg) and low effective output capacitance (Coss(eff)), enabling faster switching frequencies. This allows designers to shrink the size of magnetic components and filters, ultimately leading to higher power density and more compact system designs. Such capabilities are crucial for modern switch-mode power supplies (SMPS), telecom and server power systems, and industrial motor drives.

The BSC190N15NS3G is housed in a robust PG-TO263-3 (D2PAK) package, offering an excellent balance between thermal performance and board space. This package ensures efficient heat dissipation, allowing the MOSFET to handle high power levels reliably. Furthermore, the device demonstrates a strong avalanche ruggedness, providing an additional safety margin in harsh operating environments where voltage spikes may occur.

Its combination of high voltage capability, low losses, and robust construction makes it an ideal choice for:

Primary side switching in AC-DC power supplies.

Power conversion stages in telecom and data center infrastructure.

Motor control and drives in industrial automation.

Solar inverters and other renewable energy systems.

ICGOOODFIND: The Infineon BSC190N15NS3G stands out as a superior component, masterfully balancing ultra-low RDS(on) for minimal conduction loss with exceptional switching characteristics for high-frequency operation. Its ruggedness and thermal performance make it a reliable and highly efficient solution for demanding power conversion tasks, empowering designers to create the next generation of energy-efficient electronics.

Keywords: Low RDS(on), High Switching Performance, Power Density, OptiMOS Technology, Avalanche Ruggedness.